| 2023-08-19 |
S.K.Maity and S.Pandit, Modeling of inversion layer capacitance of III-V double gate MOSFETs using a neural network-based regression technique
|
Journal of Computational Electronics |
Co-Author |
Electronic ISSN 1572-8137 Print ISSN 1569-8025 |
2.1 |
15 |
Volume 22, pages 1472–1481 |
| 2023-07-12 |
S.Das, D.K.Das and S.Pandit, A novel routing algorithm for GNR based interconnect considering area optimization, interconnect-reliability and timing issues
|
Analog Integrated Circuits and Signal Processing, Springer |
Co-Author |
Electronic ISSN 1573-1979 Print ISSN 0925-1030 |
1.4 |
10 |
Volume 116, pages 49–67, (2023) |
| 2022-08-13 |
S.K.Maity, P.Dutta and S.Pandit, Compact drain current modeling of planar InGaAs quantum well MOSFET
|
Micro and Nanostructures, Elsevier |
Co-Author |
2773-0123 ISSN |
3.22 |
14 |
Vol.169, September 2022, Pages: 207361, 1-14 |
| 2022-05-20 |
S.K.Maity and S.Pandit, Device-circuit analysis of ultra-thin body In1−xGaxAs on insulator MOS transistor with varying indium mole fraction and channel thickness
|
Engineering Research Express, IoP Science |
Co-Author |
Online ISSN: 2631-8695 |
1.205 |
17.5 |
025024, 1-12 |
| 2022-03-18 |
K.Mukherjee, T.Sau, S.Upadhyay, S.Mitra, A.bhoumick, S.Sarkhel, S.Pandit and R.K. Pal,A 588 nW, 1 nA current reference circuit with extremely low (0.002%/V) line sensitivity over a wide supply voltage range and low temperature coefficient
|
International Journal of Numerical Modeling,: Electronic Networks, Devices and Field, John Willey |
Co-Author |
Online ISSN:1099-1204 |
1.75 |
12.25 |
2022; 35( 4):e2999 |
| 2021-07-31 |
S.Sengupta and S.Pandit. A Unified Model of Drain Current Local Variability due to Channel Length Fluctuation for an n-channel Eδ DC MOS Transistor
|
Silicon Springer Nature |
Co-Author and Supervisor |
Electronic ISSN 1876-9918 Print ISSN 1876- 990X |
2.941 |
20 |
4979-4989 |
| 2021-06-25 |
S.K.Maity and S.Pandit, A SPICE compatible physics-based intrinsic charge and capacitance model of InAs-OI-Si MOS transistor
|
Superlattices and Microstructures, Elsevier |
Co-Author & Supervisor |
ISSN: 0749-6036 |
2.658 |
20 |
106975: 1-13 |
| 2020-07-13 |
S.K. Maity., S.Pandit, Performance Assessment of CMOS circuits using III-V on Insulator MOS Transistors Performance Assessment of CMOS circuits using III‐V on Insulator MOS Transistors
|
Silicon Springer Nature |
Co-Author |
Electronic ISSN 1876-9918 Print ISSN 1876-990X |
2.941 |
- |
Silicon 13, pp 1939–1949 |
| 2020-05-22 |
S.Das, D.Das and S.Pandit, A Global Routing Method for Graphene Nanoribbons Based Circuits and Interconnects
|
ACM Journal on Emerging Technologies in Computing Systems |
Co-Author |
ISSN:1550-4832 EISSN:1550-4840 |
1.420 |
- |
Vol. 16 no 3 Article No.: 31, pp 1–28 |
| 2020-04-14 |
S. K. Maity, A. Haque and S. Pandit, Charge-Based Compact Drain Current Modeling of InAs-OI-Si MOSFET Including Sub band Energies and Band Nonparabolicity
|
IEEE Transactions on Electron Devices |
Co-Author |
Print ISSN: 0018-9383 Electronic ISSN: 1557-9646 |
2.917 |
- |
Vol. 67, no. 6 pp 2282 - 2289 |
| 2019-07-31 |
S.K.Maity and S.Pandit, Analysis of scaling of thickness of the buffer layer on analog/RF and circuit performance of InAs‐OI‐Si MOSFET using NQS model
|
International Journal of Numerical Modeling,: Electronic Networks, Devices and Field, John Willey |
Co-Author |
Online ISSN:1099-1204 |
1.75 |
- |
2020; 33:e2664. |
| 2018-03-05 |
S. Sengupta and S. Pandit, Analysis of Drain Current Local Variability of an n-Channel E δ DC MOSFET Due to RDD Considering Inversion Charge and Correlated Mobility Fluctuations
|
IEEE Transactions on Electron Devices |
Co-Author |
Print ISSN: 0018-9383 Electronic ISSN: 1557-9646 |
2.917 |
20 |
vol. 65, no. 4, pp. 1267-1275 |
| 2017-09-01 |
R.Das, A.K.Gond, S.Sengupta, R.R.Sahani and S.Pandit, Study of temperature variation on threshold voltage and subthreshold slope of EδDC MOS transistor including quantum corrections and reduction techniques'
|
Microsystem Technologies, Springer |
Co-Author & Supervisor |
Print ISSN 0946- 7076, Online ISSN 1432-1858 |
2.658 |
14 |
Vol. 23 no 9 pp 4221–4229 |
| 2017-07-26 |
S.K.Maity and S.Pandit, Effects of BOX Engineering on Analog/RF and circuit performance of InGaAs‐ OI‐Si MOSFET
|
International Journal of Electronics, Taylor and Francis, UK |
Co-Author |
ISSN 0020-7217 (Print); ISSN 1362-3060 (Online) |
1.336 |
21 |
Vol. 104, 2017 - no 11, pp 1777-1794 |
| 2017-02-01 |
S.K.Maity and S.Pandit, Study of G-S/D underlap for enhanced analog performance and RF/circuit analysis of UTB InAs-OI-Si MOSFET using NQS small signal model
|
Superlattices and Microstructures |
Co-Author & Supervisor |
ISSN: 0749-6036 |
2.658 |
20 |
Vol. 101, January 2017, Pages 362-372 |